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Zowie Technology Corporation General Purpose Transistor
NPN Silicon
3 BASE 1 2 2 EMITTER COLLECTOR 3
BC847A,B,C
1
SOT-23
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 45 50 6.0 100 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C
(1)
Symbol TA=25 C
o
Max. 225 1.8 556 300 2.4 417 -55 to +150
Unit mW mW / oC
o
PD R JA
Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature
(2)
C/W
TA=25 C
o
PD R JA TJ,TSTG
mW mW / oC
o
C/W o C
DEVICE MARKING BC847A=1E; BC847B=1F; BC847C=1G ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Characteristic Symbol Min. Typ. Max. Unit
o
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage ( IC=10mA ) Collector-Emitter Breakdowe Voltage ( IC=10 uA, VEB=0 ) Collector-Base Breakdowe Voltage ( IC=10 uA ) Emitter-Base Breakdowe Voltage ( IE=1.0 uA ) Collector Cutoff Current ( VCB=30 V ) ( VCB=30 V, TA = 150oC )
(1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
V(BR)CEO
45
-
-
Vdc
V(BR)CES
50
-
-
Vdc
V(BR)CBO V(BR)EBO
50 6.0
-
-
Vdc Vdc
ICBO
-
-
15 5.0
nAdc uAdc
REV. : 0
Zowie Technology Corporation
Zowie Technology Corporation
o
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued)
Characteristic Symbol Min. Typ. Max. Unit
ON CHARACTERISTICS
DC Current Gain ( IC= 10 uA, VCE= 5.0 V ) BC847A BC847B BC847C HFE BC847A BC847B BC847C 110 200 420 180 290 520 90 150 270 220 450 800
( IC= 2.0 mA, VCE= 5.0 V )
-
Collector-Emitter Saturation Voltage ( IC= 10 mA, IB= 0.5 mA ) ( IC= 100 mA, IB= 5.0 mA ) Base-Emitter Saturation Voltage ( IC= 10 mA, IB= 0.5 mA ) ( IC= 100 mA, IB= 5.0 mA ) Base-Emitter Voltage ( IC= 2.0 mA, VCE= 5.0V ) ( IC= 10 mA, VCE= 5.0V )
VCE(sat)
-
-
0.25 0.60
V
VBE(sat)
-
0.7 0.9
-
V
VBE(on)
580 -
660 -
700 770
mV
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product ( IC= 10 mA, VCE= 5.0 V, f=100 MHZ ) Output Capacitance ( VCB= 10 V, f=1.0 MHZ ) Noise Figure ( VCE= 5.0 Vdc, IC= 0.2 mA, RS= 2.0k ohms, f=1.0 kHZ, BW = 200HZ) fT 100 MHZ
Cobo
-
-
4.5
pF
NF
-
-
10
dB
REV. : 0
Zowie Technology Corporation
Zowie Technology Corporation
BC847A,B,C
hFE, NORMALIZED DC CURRENT GAIN
2.0 1.5
VCE = 10 V o TA= 25 C
1.0 0.9 0.8
TA= 25 C
o
1.0 0.8 0.6
V, VOLTAGE ( VOLTS )
VBE(SAT) @ IC/IB = 10
0.7
VBE(on) @ VCE = 10 V
0.6 0.5 0.4 0.3 0.2 0.1
VCE(SAT) @ IC/IB = 10
0.4 0.3
0.2 0.2
0 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT ( mA )
IC, COLLECTOR CURRENT ( mA )
Figure 1. Normalized DC Current Gain
Figure 2. "Saturation" and "On" Voltage
VCE, COLLECTOR EMITTER VOLTAGE ( V )
TA= 25 C IC = 10 mA IC = 20 mA IC = 50 mA
o
TEMPERATURE COEFFICIENT (mV / C)
2.0
IC = 200 mA
1.0
-55 C to +125 C
o o
o
1.6
1.2
1.6
IC = 100 mA
1.2
2.0
0.8
2.4
0.4
2.8
0 0.02
0.1
1.0
10
20
VB,
0.2
1.0
10
100
IB, BASE CURRENT ( mA )
IC, COLLECTOR CURRENT ( mA )
Figure 3. Collector Saturation Region
Figure 4. Base-Emitter Temperature Coefficient
tT, CURRENT-GAIN-BANDWIDTH PRODUCT(MHZ)
10
TA= 25 C
o
400 300 200
VCE = 10 V o TA= 25 C
7.0
C, CAPACITANCE ( pF )
5.0
Cib
3.0
Cob
100 80 60 40 30 20 0.5 0.7
2.0
1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40
1.0
2.0
3.0
5.0 7.0
10
20
30
50
VR, REVERSE VOLTAGE ( VOLTS )
IC, COLLECTOR CURRENT ( mA )
Figure 5. Capacitances
Figure 6. Current-Gain-Bandwidth Product
REV. : 0
Zowie Technology Corporation
Zowie Technology Corporation
BC847A,B,C
hFE, DC CURRENT GAIN (NORMALIZED)
1.0
TA= 25 C VCE = 5 V o TA= 25 C
o
0.8
2.0 1.0 0.5
V, VOLTAGE ( VOLTS )
VBE(SAT) @ IC/IB = 10
0.6
VBE @ VCE = 5.0 V
0.4
0.2
VCE(SAT) @ IC/IB = 10
0.2 0 0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT ( mA )
IC, COLLECTOR CURRENT ( mA )
Figure 7. DC Current Gain
Figure 8. "On" Voltage
VCE, COLLECTOR EMITTER VOLTAGE ( V )
TA= 25 C IC = 200 mA IC = 100 mA
o
TEMPERATURE COEFFICIENT (mV / C)
2.0
-1.0
-55 C to +125 C
o o
o
1.6
-1.4
IC = 20 mA
IC = 10 mA
IC = 50 mA
1.2
-1.8
VB
for VBE
0.8
-2.2
0.4
-2.6
VB,
0 0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
-3.0 0.2
1.0
10
200
IB, BASE CURRENT ( mA )
IC, COLLECTOR CURRENT ( mA )
Figure 9. Collector Saturation Region
Figure 10. Base-Emitter Temperature Coefficient
REV. : 0
Zowie Technology Corporation

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